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Growth of Well-Aligned InN Nanorods on Amorphous Glass SubstratesBand offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.The immiscibility of InAlN ternary alloyMorphology Controlled Fabrication of InN Nanowires on Brass Substrates.Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays.
P50
description
investigador
@es
researcher
@en
wetenschapper
@nl
name
Hui Jie Li
@en
Hui Jie Li
@nl
type
label
Hui Jie Li
@en
Hui Jie Li
@nl
prefLabel
Hui Jie Li
@en
Hui Jie Li
@nl
P31
P496
0000-0002-4014-1110