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Q33580213-E1EEA39A-EFA1-4C1E-A6C7-7A2A609D6F2F
Q33580213-E1EEA39A-EFA1-4C1E-A6C7-7A2A609D6F2F
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http://www.wikidata.org/entity/statement/Q33580213-E1EEA39A-EFA1-4C1E-A6C7-7A2A609D6F2F
Selective control of electron and hole tunneling in 2D assembly.
P2860
Q33580213-E1EEA39A-EFA1-4C1E-A6C7-7A2A609D6F2F
BestRank
Statement
http://www.wikidata.org/entity/statement/Q33580213-E1EEA39A-EFA1-4C1E-A6C7-7A2A609D6F2F
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1c2f0af3f50398987870acf170cb2e79ddb95b22
P2860
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.