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Q33678460-8649A695-979E-479F-ABA1-E2FD878230D1
Q33678460-8649A695-979E-479F-ABA1-E2FD878230D1
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http://www.wikidata.org/entity/statement/Q33678460-8649A695-979E-479F-ABA1-E2FD878230D1
Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
P2860
Q33678460-8649A695-979E-479F-ABA1-E2FD878230D1
BestRank
Statement
http://www.wikidata.org/entity/statement/Q33678460-8649A695-979E-479F-ABA1-E2FD878230D1
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43e13c36565c6cb8efed379a2d62769b0efe8edd
P2860
Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect.