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Q36443404-29AC97E5-06A3-4BA3-B710-4045247ABF2B
Q36443404-29AC97E5-06A3-4BA3-B710-4045247ABF2B
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http://www.wikidata.org/entity/statement/Q36443404-29AC97E5-06A3-4BA3-B710-4045247ABF2B
Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.
P2860
Q36443404-29AC97E5-06A3-4BA3-B710-4045247ABF2B
BestRank
Statement
http://www.wikidata.org/entity/statement/Q36443404-29AC97E5-06A3-4BA3-B710-4045247ABF2B
rank
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wasDerivedFrom
dc2d36d1b1446b37a83c9e0d0375536b75422152
P2860
Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory