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Q38755259-D63A065B-B417-4468-88D8-B6F851E3368E
Q38755259-D63A065B-B417-4468-88D8-B6F851E3368E
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http://www.wikidata.org/entity/statement/Q38755259-D63A065B-B417-4468-88D8-B6F851E3368E
Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2.
P2860
Q38755259-D63A065B-B417-4468-88D8-B6F851E3368E
BestRank
Statement
http://www.wikidata.org/entity/statement/Q38755259-D63A065B-B417-4468-88D8-B6F851E3368E
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wasDerivedFrom
e6b42f0ca8efb53e132a4336e131e177c83d7798
P2860
High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.