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Q41417654-0319733F-4DDA-4591-B004-1AB90BDDF381
Q41417654-0319733F-4DDA-4591-B004-1AB90BDDF381
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http://www.wikidata.org/entity/statement/Q41417654-0319733F-4DDA-4591-B004-1AB90BDDF381
Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy.
P2860
Q41417654-0319733F-4DDA-4591-B004-1AB90BDDF381
BestRank
Statement
http://www.wikidata.org/entity/statement/Q41417654-0319733F-4DDA-4591-B004-1AB90BDDF381
rank
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type
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wasDerivedFrom
85eb52debf00ae27896090cf99802f3b8b03350c
P2860
Single-layer MoS2 phototransistors.