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Q50101896-3AA10B70-462E-45C5-AD68-061312B86449
Q50101896-3AA10B70-462E-45C5-AD68-061312B86449
BestRank
Statement
http://www.wikidata.org/entity/statement/Q50101896-3AA10B70-462E-45C5-AD68-061312B86449
Inducing and Manipulating Heteroelectronic States in a Single MoS_{2} Thin Flake.
P2860
Q50101896-3AA10B70-462E-45C5-AD68-061312B86449
BestRank
Statement
http://www.wikidata.org/entity/statement/Q50101896-3AA10B70-462E-45C5-AD68-061312B86449
rank
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wasDerivedFrom
194f841df1196393df6d8d7420c96b3e21e87185
P2860
Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor.