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Q51020869-135FB32A-3BE6-461C-A896-FB48406F46CE
Q51020869-135FB32A-3BE6-461C-A896-FB48406F46CE
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http://www.wikidata.org/entity/statement/Q51020869-135FB32A-3BE6-461C-A896-FB48406F46CE
Temperature-Related Morphological Evolution of MoS2 Domains on Graphene and Electron Transfer within Heterostructures.
P2860
Q51020869-135FB32A-3BE6-461C-A896-FB48406F46CE
BestRank
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http://www.wikidata.org/entity/statement/Q51020869-135FB32A-3BE6-461C-A896-FB48406F46CE
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4575f4866d20e799b7f6b4091c24c3bd97016a74
P2860
High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.