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Q51659656-6C89F382-BF05-4E87-87D7-02B051DDA989
Q51659656-6C89F382-BF05-4E87-87D7-02B051DDA989
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http://www.wikidata.org/entity/statement/Q51659656-6C89F382-BF05-4E87-87D7-02B051DDA989
Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode.
P2860
Q51659656-6C89F382-BF05-4E87-87D7-02B051DDA989
BestRank
Statement
http://www.wikidata.org/entity/statement/Q51659656-6C89F382-BF05-4E87-87D7-02B051DDA989
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wasDerivedFrom
5ec413dacb03f25f55cb70a57344a202fef2ff7e
P2860
Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide