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Q51694125-3C713C75-0848-4FE7-B791-174DF10B0D1D
Q51694125-3C713C75-0848-4FE7-B791-174DF10B0D1D
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http://www.wikidata.org/entity/statement/Q51694125-3C713C75-0848-4FE7-B791-174DF10B0D1D
Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors.
P2860
Q51694125-3C713C75-0848-4FE7-B791-174DF10B0D1D
BestRank
Statement
http://www.wikidata.org/entity/statement/Q51694125-3C713C75-0848-4FE7-B791-174DF10B0D1D
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65619531ebb1281b260d5f7351b130d87efbd353
P2860
High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.