about
Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.Metal-Insulator Transition of strained SmNiO3 Thin Films: Structural, Electrical and Optical Properties.Competition between strain and dimensionality effects on the electronic phase transitions in NdNiO3 filmsSynaptic organic transistors with a vacuum-deposited charge-trapping nanosheet.Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.Long-Term Homeostatic Properties Complementary to Hebbian Rules in CuPc-Based Multifunctional Memristor.Three-terminal resistive switch based on metal/metal oxide redox reactions.A steep-slope transistor based on abrupt electronic phase transition.Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.Schmitt trigger using a self-healing ionic liquid gated transistor.Memristive and neuromorphic behavior in a Li(x)CoO2 nanobattery.Oxygen Vacancy in WO3 Film-based FET with Ionic Liquid Gating.Tuning the metal-insulator crossover and magnetism in SrRuO₃ by ionic gating.Structurally triggered metal-insulator transition in rare-earth nickelates.Impact of Synaptic Device Variations on Pattern Recognition Accuracy in a Hardware Neural Network.Direct imaging of structural changes induced by ionic liquid gating leading to engineered three-dimensional meso-structuresMetal-insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching
P2860
Q33996022-4A7C3EA1-59E3-4259-8591-073CDBC176B9Q36252288-B7387258-4993-4605-934F-FB757898BBEDQ36388163-EBC61FB2-EB28-4669-A795-45F0CB29FCBEQ37267123-AA7955F9-C536-47BB-A3DB-C057E5A18953Q37298469-CE5A8B11-8B80-4FAB-B51E-1CC1712ADE65Q37352790-70C06B38-FF9B-47F5-9347-CB7D1BC10AC0Q38636064-EEBE5893-2529-41CF-8489-275645CD00C5Q41875973-3B8F73DC-AD39-4321-A056-CB961A6E5FD1Q41899908-64402F53-64D2-49F5-8AC6-AD374C4B101DQ42073849-1354901F-A2C5-4762-B597-1D0990725F01Q42137296-327A2434-D26B-4114-ADC1-FC6FA60DFA16Q42363719-E60D239B-5515-4C2E-80C3-A472F75274C9Q42941315-98AFE466-0BEE-4152-99BB-4F72EF3B4BC4Q47118061-C20B01A9-01A5-4C77-83EB-AA34E371939BQ49357043-081B07FD-DF3F-4246-B725-BD8584E7181DQ58374778-FD870E82-1570-45FA-BC4D-51580D56C5E7Q58762596-FA2E6B60-D680-41F8-815B-03F77F8F120F
P2860
description
2013 nî lūn-bûn
@nan
2013 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
2013 թվականի հունվարին հրատարակված գիտական հոդված
@hy
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
name
A correlated nickelate synaptic transistor.
@ast
A correlated nickelate synaptic transistor.
@en
A correlated nickelate synaptic transistor.
@nl
type
label
A correlated nickelate synaptic transistor.
@ast
A correlated nickelate synaptic transistor.
@en
A correlated nickelate synaptic transistor.
@nl
prefLabel
A correlated nickelate synaptic transistor.
@ast
A correlated nickelate synaptic transistor.
@en
A correlated nickelate synaptic transistor.
@nl
P2093
P2860
P356
P1476
A correlated nickelate synaptic transistor.
@en
P2093
Shriram Ramanathan
P2860
P2888
P356
10.1038/NCOMMS3676
P577
2013-01-01T00:00:00Z
P5875
P6179
1011691222