Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
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Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.Dynamic defect correlations dominate activated electronic transport in SrTiO3.Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure.
P2860
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
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2015 nî lūn-bûn
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2015年の論文
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2015年論文
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2015年論文
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2015年論文
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name
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
@ast
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
@en
type
label
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
@ast
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
@en
prefLabel
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
@ast
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
@en
P2093
P2860
P356
P1433
P1476
Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.
@en
P2093
Adam J Hauser
Adam P Kajdos
Evgeny Mikheev
Jinwoo Hwang
Susanne Stemmer
P2860
P2888
P356
10.1038/SREP11079
P407
P577
2015-06-09T00:00:00Z