about
Human-Like Sensing and Reflexes of Graphene-Based Films.Highly sensitive hot electron bolometer based on disordered graphene.Graphene Encapsulated Copper Microwires as Highly MRI Compatible Neural Electrodes.Surface-enhanced Raman scattering of p-aminothiophenol on a Au(core)/Cu(shell) nanoparticle assembly.Substrate-induced Raman frequency variation for single-walled carbon nanotubes.Thermochemical hole burning on a series of N-substituted morpholinium 7,7,8,8-tetracyanoquinodimethane charge-transfer complexes for data storage.Chirality-dependent transport properties of double-walled nanotubes measured in situ on their field-effect transistors.Carbide-forming groups IVB-VIB metals: a new territory in the periodic table for CVD growth of graphene.Direct Chemical Vapor Deposition-Derived Graphene Glasses Targeting Wide Ranged Applications.Growing Uniform Graphene Disks and Films on Molten Glass for Heating Devices and Cell Culture.Can graphene be used as a substrate for Raman enhancement?Local gate effect of mechanically deformed crossed carbon nanotube junction.Thermochemical hole burning performance of TCNQ-based charge transfer complexes with different electrical conductivities.Atomic-scale morphology and electronic structure of manganese atomic layers underneath epitaxial graphene on SiC(0001).Modulation-doped growth of mosaic graphene with single-crystalline p-n junctions for efficient photocurrent generation.Single and polycrystalline graphene on Rh(111) following different growth mechanisms.Nanogap based graphene coated AFM tips with high spatial resolution, conductivity and durability.Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructuresPatterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors.van Hove Singularity Enhanced Photochemical Reactivity of Twisted Bilayer Graphene.Surface enhanced Raman spectroscopy on a flat graphene surface.CVD growth of large area smooth-edged graphene nanomesh by nanosphere lithographySelectively enhanced photocurrent generation in twisted bilayer graphene with van Hove singularity.Resonant Raman spectroscopy of individual strained single-wall carbon nanotubes.The edge- and basal-plane-specific electrochemistry of a single-layer graphene sheet.Helicity-dependent single-walled carbon nanotube alignment on graphite for helical angle and handedness recognition.Aligned, ultralong single-walled carbon nanotubes: from synthesis, sorting, to electronic devices.Vertically aligned single-walled carbon nanotubes by chemical assembly--methodology, properties, and applications.Approaching the electromagnetic mechanism of surface-enhanced Raman scattering: from self-assembled arrays to individual gold nanoparticles.Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline.A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films.Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties.Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.Transition Metal Dichalcogenides: Morphological Engineering of CVD-Grown Transition Metal Dichalcogenides for Efficient Electrochemical Hydrogen Evolution (Adv. Mater. 29/2016).Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.Morphological Engineering of CVD-Grown Transition Metal Dichalcogenides for Efficient Electrochemical Hydrogen Evolution.Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts.Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire.Plasmonic hot electron induced structural phase transition in a MoS2 monolayer.Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary.
P50
Q28586971-86219980-E5A3-4D0D-89C9-5F8DC317A243Q30445594-8AB17842-3145-4B96-9523-0344ADD8C0B5Q31140402-87FDA5C2-5573-485B-A6EE-71E76B7CCBF4Q33214887-CD96AA95-DF57-4D91-8649-0F3142E97A4DQ33228666-E851A297-99BB-4873-8FBA-8B397647F286Q33250998-B15B0406-AFDB-472B-ADFE-2D8C383D1244Q33394314-A0E14AE3-DEDB-4E30-A291-629AFC3159A3Q33461759-312C8DC4-3ABD-46B8-8A5E-76C78500671FQ33465897-31398F38-258F-4C10-88D0-C96C28F0D1E8Q33466377-3AF314E9-9836-40E1-A6ED-E1F651AFBC3BQ33521070-B70EE32B-CD8B-4CD8-94AA-6958A4DA2A7BQ33718403-44B4EA24-F2DB-4C40-99E6-418A92232505Q33985811-5C18E166-329A-4DB1-B3DD-A4D9F56B5973Q34365289-3C6B29CF-D990-4CEA-87AA-CFDC16CF011DQ34509081-6A0BC1C6-70A9-4A86-85DB-882973BFC869Q34597829-FCCEE6CC-EF1B-41A5-AAAF-66B7B0AA0675Q35000458-C78BADA6-F2B2-4B99-934C-96A46D70C9AFQ35488394-FC52E06A-7388-4ABA-A256-2DE7B0393486Q35543235-6F1B4500-835E-49D7-8B27-789A1BFCCDE6Q35685228-FB8008D7-7476-43A2-AE52-A71D05692723Q36066443-E940BACC-93BC-422C-8197-BF8BDF4DD970Q36593397-D942316F-FF94-4B28-8350-D524FBFD7EE3Q36674460-32EA8A1A-2C89-4413-A5C3-64C43AFFC54DQ36848917-D1817F85-7FD0-4CF2-BD2A-816D530EA8B9Q37054822-E4102A93-A484-486C-BC23-D9EFF434F0F9Q37064862-53473F28-9510-4450-B18C-694A01CC94DDQ37722644-DD6CCBFB-14E4-4C0D-AD53-4BB25B6AF60FQ37741136-FB2DD7FC-6ABB-47C8-A665-3294AB3B6D59Q37814992-F18CB46C-3D3E-48D7-BD46-DF9580D13402Q38254336-021F09AE-23B4-4629-8C78-73D48AE32603Q38366402-4111FA79-BB68-4343-B5FE-0CA7EAF301EFQ38600076-23F5F882-9ABE-441A-A8B5-C97B33BEE230Q38629109-9F3AA0AF-38E9-458B-BAB9-70BEA7E3988EQ38835827-102FFF08-1BA2-481A-9C3B-2C10D04B6BFAQ38903567-CE1A6A28-08AE-4DD2-A1A9-06269093D5C1Q38911703-F4A90A21-4742-46D2-9EA3-E9BA85B7D5D6Q39054308-CA8C782A-9E9C-4291-AE35-F2FB20E98A00Q39092490-0CD59661-B876-49EE-87F5-5799BEEFBEECQ39147918-6264682A-6026-4C97-8BC3-897A94855EA5Q39348184-EFD233B0-B153-4BF3-A50D-8E9058B87E84
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Zhongfan Liu
@ast
Zhongfan Liu
@en
Zhongfan Liu
@es
Zhongfan Liu
@nl
Zhongfan Liu
@sl
type
label
Zhongfan Liu
@ast
Zhongfan Liu
@en
Zhongfan Liu
@es
Zhongfan Liu
@nl
Zhongfan Liu
@sl
prefLabel
Zhongfan Liu
@ast
Zhongfan Liu
@en
Zhongfan Liu
@es
Zhongfan Liu
@nl
Zhongfan Liu
@sl
P106
P31
P496
0000-0001-5554-1902