Emerging memories: resistive switching mechanisms and current status.
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Status and Prospects of ZnO-Based Resistive Switching Memory Devices.Interfacial chemical bonding-mediated ionic resistive switching.Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.Dual conical conducting filament model in resistance switching TiO2 thin films.Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study.Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.Information processing in parallel through directionally resolved molecular polarization components in coherent multidimensional spectroscopy.Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAMAtomic View of Filament Growth in Electrochemical Memristive ElementsPolarized hard X-ray photoemission system with micro-positioning technique for probing ground-state symmetry of strongly correlated materialsConductance Quantization in Resistive Random Access Memory.Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator.Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.25th anniversary article: metal oxide particles in materials science: addressing all length scales.Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.Application of phase-change materials in memory taxonomy.Recent Advances on Neuromorphic Systems Using Phase-Change Materials.Nonvolatile ferroelectric domain wall memory.Real-time encoding and compression of neuronal spikes by metal-oxide memristors.Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.Maskless X-Ray Writing of Electrical Devices on a Superconducting Oxide with Nanometer Resolution and Online Process Monitoring.Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer.Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film.Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.Ferroelectric self-assembled molecular materials showing both rectifying and switchable conductivity.Point contact resistive switching memory based on self-formed interface of Al/ITO.Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors.Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes.Large resistive switching in ferroelectric BiFeO₃ nano-island based switchable diodes.Mechanical loss in multiferroic materials at high frequencies: friction and the evolution of ferroelastic microstructures.Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM.Probing electrochemically induced resistive switching of TiO2 using SPM techniques.Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices.Study of the presence of spherical deformations on the Al top electrode due to electroforming in rewritable organic resistive memories.A Collective Study on Modeling and Simulation of Resistive Random Access Memory.Conjugated polymer covalently modified graphene oxide quantum dots for ternary electronic memory devices.Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr_{2}IrO_{4}.
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Emerging memories: resistive switching mechanisms and current status.
description
article científic
@ca
article scientifique
@fr
articol științific
@ro
articolo scientifico
@it
artigo científico
@gl
artigo científico
@pt
artigo científico
@pt-br
artikel ilmiah
@id
artikull shkencor
@sq
artículo científico
@es
name
Emerging memories: resistive switching mechanisms and current status.
@en
type
label
Emerging memories: resistive switching mechanisms and current status.
@en
prefLabel
Emerging memories: resistive switching mechanisms and current status.
@en
P2093
P356
P1476
Emerging memories: resistive switching mechanisms and current status
@en
P2093
Cheol Seong Hwang
Doo Seok Jeong
H Kohlstedt
R S Katiyar
P304
P356
10.1088/0034-4885/75/7/076502
P407
P50
P577
2012-06-28T00:00:00Z