Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

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The Relationship Between Atomic Structure and Strain Distribution of Misfit Dislocation Cores at Cubic Heteroepitaxial Interfaces.Topologically Allowed Nonsixfold Vortices in a Sixfold Multiferroic Material: Observation and Classification.

P2860

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P2860

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

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2013年論文

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2013年論文

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Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

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label

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

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Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

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P1476

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

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P2093

Chunwang Zhao

http://www.w3.org/2001/XMLSchema#string

Jijun Li

http://www.w3.org/2001/XMLSchema#string

Shaojian Su

http://www.w3.org/2001/XMLSchema#string

Yongming Xing

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P2860

Ge/Si nanowire heterostructures as high-performance field-effect transistors

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.

Room-temperature ferroelectricity in strained SrTiO3.

The Peak Pairs algorithm for strain mapping from HRTEM images.

Recent progress in thin film epitaxy across the misfit scale (2011 Acta Gold Medal Paper)

Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy

P304

2130-2142

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P31

scholarly article

P356

10.3390/MA6062130

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P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Buwen Cheng

P577

2013-05-24T00:00:00Z

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P5875

258806265

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P698

28809265

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P932

5458948

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Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

about

P2860

P2860

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P433

P478

P50

P577

P5875

P698

P932

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P433

P478

P50

P577

P5875

P698

P932