Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
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Indium Antimonide Nanowires: Synthesis and PropertiesLow-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition.Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.Subwavelength InSb-based Slot wavguides for THz transport: concept and practical implementations.High-performance ultraviolet photodetectors based on CdS/CdS:SnS2 superlattice nanowires.Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires.III–V Nanowires: Synthesis, Property Manipulations, and Device Applications
P2860
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P2860
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
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2013 nî lūn-bûn
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2013年の論文
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2013年論文
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2013年論文
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2013年論文
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2013年論文
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2013年論文
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2013年论文
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2013年论文
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2013年论文
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name
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
@en
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
@nl
type
label
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
@en
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
@nl
prefLabel
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
@en
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.
@nl
P2093
P2860
P356
P1433
P1476
Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors
@en
P2093
Chun-Yuen Wong
Ho-Yuen Cheung
Min Hyung Lee
TakFu Hung
Xiaoling Shi
Zai-xing Yang
P2860
P304
P356
10.1039/C3NR03080F
P407
P577
2013-10-01T00:00:00Z