Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
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Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
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name
Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
@en
Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
@nl
type
label
Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
@en
Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
@nl
prefLabel
Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
@en
Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature.
@nl
P2093
P2860
P356
P1433
P1476
Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature
@en
P2093
Jinzong Kou
Junmeng Guo
Rongmei Wen
Yang Zhang
Yudong Liu
P2860
P356
10.1002/ADMA.201704524
P407
P577
2018-01-10T00:00:00Z