Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
about
Polarization enhancement and ferroelectric switching enabled by interacting magnetic structures in DyMnO₃ thin filmsElectric control of magnetism at the Fe/BaTiO₃ interface.Multiferroics. Magnetoelectric domain control in multiferroic TbMnO₃.Anomalous exchange bias at collinear/noncollinear spin interface.Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology
P2860
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
@zh-hant
name
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
@en
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
@nl
type
label
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
@en
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
@nl
prefLabel
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
@en
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
@nl
P2093
P2860
P1476
Chiral domains in cycloidal multiferroic thin films: switching and memory effects.
@en
P2093
P2860
P304
P356
10.1103/PHYSREVLETT.107.257601
P407
P577
2011-12-12T00:00:00Z