about
An electrically-driven GaAs nanowire surface plasmon source.Majorana bound state in a coupled quantum-dot hybrid-nanowire system.Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy.Towards low-dimensional hole systems in Be-doped GaAs nanowires.Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111).Hard gap in epitaxial semiconductor-superconductor nanowires.Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures.Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon.Epitaxy of advanced nanowire quantum devices.Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis.Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry.Normal, superconducting and topological regimes of hybrid double quantum dots.Scaling of Majorana Zero-Bias Conductance Peaks.Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.Ag-catalyzed InAs nanowires grown on transferable graphite flakes.Semiconductor-Nanowire-Based Superconducting Qubit.Evolution of Nanowire Transmon Qubits and Their Coherence in a Magnetic Field.Topological Phases in InAs_{1-x}Sb_{x}: From Novel Topological Semimetal to Majorana Wire.Single-nanowire solar cells beyond the Shockley–Queisser limitTransport Signatures of Quasiparticle Poisoning in a Majorana IslandSelective-Area-Grown Semiconductor-Superconductor Hybrids: A Basis for Topological NetworksExponential protection of zero modes in Majorana islandsAbsolute dimensions of eclipsing binariesGatemon Benchmarking and Two-Qubit OperationsParity lifetime of bound states in a proximitized semiconductor nanowireAnharmonicity of a superconducting qubit with a few-mode Josephson junctionCorrelation between Electrical Transport and Nanoscale Strain in InAs/InGaAs Core-Shell NanowiresCrystal orientation dependence of the spin-orbit coupling in InAs nanowiresDirect Microwave Measurement of Andreev-Bound-State Dynamics in a Semiconductor-Nanowire Josephson JunctionEffective g Factor of Subgap States in Hybrid NanowiresEngineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protectionNear-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytesp-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit GatingConduction channels of an InAs-Al nanowire Josephson weak linkCurrent–phase relations of few-mode InAs nanowire Josephson junctionsMicrowave spectroscopy of spinful Andreev bound states in ballistic semiconductor Josephson junctionsInAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel BarriersNanowire-Aperture Probe: Local Enhanced Fluorescence Detection for the Investigation of Live Cells at the NanoscaleEpitaxy of semiconductor–superconductor nanowiresRaman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation
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P50
description
hulumtues
@sq
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Peter Krogstrup
@ast
Peter Krogstrup
@en
Peter Krogstrup
@es
Peter Krogstrup
@nl
Peter Krogstrup
@sl
type
label
Peter Krogstrup
@ast
Peter Krogstrup
@en
Peter Krogstrup
@es
Peter Krogstrup
@nl
Peter Krogstrup
@sl
prefLabel
Peter Krogstrup
@ast
Peter Krogstrup
@en
Peter Krogstrup
@es
Peter Krogstrup
@nl
Peter Krogstrup
@sl
P1053
G-4323-2011
P106
P21
P31
P3829
P496
0000-0002-1930-8553