Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. - Test2 - elhamkhani - TriplyDB

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

http://www.wikidata.org/entity/Q51887713

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Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.Real-time device-scale imaging of conducting filament dynamics in resistive switching materials Status and Prospects of ZnO-Based Resistive Switching Memory Devices.Reversible voltage dependent transition of abnormal and normal bipolar resistive switching Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Engineering nonlinearity into memristors for passive crossbar applications Two-dimensional Mo1.33C MXene with divacancy ordering prepared from parent 3D laminate with in-plane chemical ordering.Probing nanoscale oxygen ion motion in memristive systems Interfacial chemical bonding-mediated ionic resistive switching.Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory.Smart Fluid Systems: The Advent of Autonomous Liquid Robotics.TaOx-based resistive switching memories: prospective and challenges.Thermoelectric Seebeck effect in oxide-based resistive switching memory Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiO.Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application Two centuries of memristors.Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.Dual conical conducting filament model in resistance switching TiO2 thin films.In situ forming, characterization, and transduction of nanowire memristors.Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory.In situ TEM analysis of resistive switching in manganite based thin-film heterostructures.Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.In situ imaging of the conducting filament in a silicon oxide resistive switch.Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film.Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM Resistive Switching of Individual, Chemically Synthesized TiO2 Nanoparticles.Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene.Resistive switching properties of epitaxial BaTiO(3-δ) thin films tuned by after-growth oxygen cooling pressure.Effect of non-lattice oxygen on ZrO2-based resistive switching memory.Memristive crypto primitive for building highly secure physical unclonable functions.Atomic View of Filament Growth in Electrochemical Memristive Elements Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.

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Q27305165-8B1C0B55-1D82-4757-A645-C644335121F3 Q27343802-DAD824D4-57FF-47DA-92F2-4B4248EABEA9 Q28079551-181DFCC4-9EDF-486B-8A83-A0BAB420CE23 Q28595886-8120B518-A9BB-4FA2-88F0-0D2F04E977D4 Q28822458-4812030B-BF6F-459B-BC67-E4B79CCE0E62 Q29031975-B5F11DB8-D317-43AF-B454-14EE79BAC03E Q29308363-CB5B714D-866B-4805-86A0-98AB01067082 Q33628963-D5734C13-9030-4459-AFEE-343B58A1CDF1 Q33640127-8C8A92B6-5100-48E1-8A72-931EB67E17C8 Q33683307-18F9E2E5-E68F-44DC-9733-BD7388FFC2DD Q33794204-B3D010AD-5EB0-4439-8860-8AEECAAA0662 Q33914548-72DD4E79-C892-485E-AA67-29B69E80DE7A Q34014040-8D35194D-832F-4AB1-A352-8C23533EECD6 Q34086363-21B9DA18-6FD2-4E52-B4ED-1B941D23BA67 Q34385198-906A7621-6A2B-4455-B164-0F86FCEC8A23 Q34436257-408479C2-1472-4D08-9415-048499A350E8 Q34440415-ED94EE2C-D0B8-4A26-9151-2E8C98574DC3 Q34468259-30E6D2BD-8B04-4566-B9B8-FCB1577E5210 Q34530318-C3DBBDAC-D79F-4839-8791-BBABA63C04F0 Q34637261-FD5C0AC2-EC4D-4C56-8C3E-3057EFB8EE4E Q34638483-4CF794C0-5966-40E6-A5B4-1EDFF3DA94C7 Q34824176-68234CAE-880E-449B-9A54-BB6EA7416281 Q34948422-33281BBE-F926-46C4-8531-30844B9C150A Q34979260-A36B5AD8-BF72-462F-A0C7-6290433C4589 Q34981042-85D61AE3-C0D2-4B33-A632-1DBFFB05F2E5 Q35026891-087E31BE-6746-49A8-B333-F1D3EDF32D83 Q35102967-8E387939-4CEF-41C5-A08C-2CB415E969F4 Q35207597-1AA2B370-F826-427C-BE49-8DE51125A157 Q35613164-381BB602-A410-4481-B1E1-4DFEB409CD78 Q35616669-5C553EEF-80EF-4970-BCC7-8832F6E0B172 Q35712775-B475A28A-643C-4152-8047-CB7114FC66C4 Q35772016-1BBCE84C-353C-430B-A22A-D7CD8E0738DB Q35813672-AC7C7686-4B15-4422-858D-B7387E5ED5C8 Q35833712-DED8AE84-F910-4622-BCBC-ABF263E4F725 Q35838084-6FB7D0AA-FE7C-4035-9EA8-DD4FF5EC8BF8 Q35851601-EF57052A-8866-40CB-BC06-B9E5972FD0D0 Q35883390-2EF64EFB-6D7C-490B-AC2E-21E663F2ECC8 Q35913555-CF397A35-D9B6-4318-873A-4C14EB06D1A1 Q35979189-B8988166-3B76-4CA2-868A-E82B2975293A Q36013733-179E040C-0C83-47E0-9B86-9647F0743CF4

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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

http://www.wikidata.org/entity/Q51887713

description

2010 nî lūn-bûn

@nan

2010年の論文

@ja

2010年学术文章

@wuu

2010年学术文章

@zh

2010年学术文章

@zh-cn

2010年学术文章

@zh-hans

2010年学术文章

@zh-my

2010年学术文章

@zh-sg

2010年學術文章

@yue

2010年學術文章

@zh-hant

name

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

@en

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

@nl

type

label

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

@en

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

@nl

prefLabel

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

@en

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

@nl

P1433

Q51887713-D71C255F-641C-45E7-BC0D-07D699877C6F

P1476

Q51887713-541B2133-F99F-401F-AF06-B4FC94DFCFE0

P2093

Q51887713-0A8F0F16-8454-4BFA-97CE-139F6F764BF6

Q51887713-17A49E05-730F-4739-B7DC-DE1C649F4E75

Q51887713-1CA81012-7A5D-4728-B9F9-C19AAB663D1C

Q51887713-38EED2F5-D941-4DE5-A127-20209479C025

Q51887713-538DCF30-DF5B-46CC-A859-18138B3F5F20

Q51887713-8F5A5E1E-9497-408F-A87B-4F6745E52069

Q51887713-B8CC6202-C9DC-4408-83DE-2ACE508E39B1

Q51887713-BB12018C-72DA-4A45-B41F-F5E89C130487

Q51887713-BB88C02B-3F45-424C-93F1-C780C7EE7427

Q51887713-BF7EDADB-6247-4BD8-9D48-83D65A0718DB

P2888

Q51887713-F2A8AE12-0C79-4480-A8D7-14B18EC8CBDB

P304

Q51887713-4FEFA625-2484-41AE-927F-E7DDCE073A3B

P31

Q51887713-025FCE3A-E96B-48D5-8A51-8A6AE358240F

P356

Q51887713-4BA4A6E9-7AD1-4987-BB0F-D117E4ABDF0A

P407

Q51887713-B4382C85-5F2D-4636-AFF3-50CACD4D1DFB

P433

Q51887713-56E7A9D5-320C-4FBC-854E-FC0267DC1973

P478

Q51887713-F8E1DC13-C1E2-466B-898F-37BA1CFA2F41

P577

Q51887713-EBD032FC-365E-46A3-BDF6-52DDDA57623E

P5875

Q51887713-67EA698F-C58C-4782-AE3B-4B842B18937F

P6179

Q51887713-045A4F65-E1FE-4709-B033-A43781FC2626

P698

Q51887713-872F452C-6F5C-4920-A587-620BFCE7ACBC

P356

P1433

Nature Nanotechnology

P1476

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

@en

P2093

Bora Lee

http://www.w3.org/2001/XMLSchema#string

Cheol Seong Hwang

http://www.w3.org/2001/XMLSchema#string

Deok-Hwang Kwon

http://www.w3.org/2001/XMLSchema#string

Gun Hwan Kim

http://www.w3.org/2001/XMLSchema#string

Gyeong-Su Park

http://www.w3.org/2001/XMLSchema#string

Jae Hyuck Jang

http://www.w3.org/2001/XMLSchema#string

Jong Myeong Jeon

http://www.w3.org/2001/XMLSchema#string

Kyung Min Kim

http://www.w3.org/2001/XMLSchema#string

Min Hwan Lee

http://www.w3.org/2001/XMLSchema#string

Miyoung Kim

http://www.w3.org/2001/XMLSchema#string

P2888

P304

148-153

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1038/NNANO.2009.456

http://www.w3.org/2001/XMLSchema#string

P407

P433

2

http://www.w3.org/2001/XMLSchema#string

P478

5

http://www.w3.org/2001/XMLSchema#string

P577

2010-01-17T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

41041500

http://www.w3.org/2001/XMLSchema#string

P6179

1034995831

http://www.w3.org/2001/XMLSchema#string

P698

20081847

http://www.w3.org/2001/XMLSchema#string