Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer.
about
Building devices from colloidal quantum dots.Planar-integrated single-crystalline perovskite photodetectorsPbS Colloidal Quantum Dot Photodetectors operating in the near infrared.A green synthesis route for the phase and size tunability of copper antimony sulfide nanocrystals with high yield.Photovoltage field-effect transistors.
P2860
Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年学术文章
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name
Photojunction field-effect tra ...... um dot absorber channel layer.
@en
Photojunction field-effect tra ...... um dot absorber channel layer.
@nl
type
label
Photojunction field-effect tra ...... um dot absorber channel layer.
@en
Photojunction field-effect tra ...... um dot absorber channel layer.
@nl
prefLabel
Photojunction field-effect tra ...... um dot absorber channel layer.
@en
Photojunction field-effect tra ...... um dot absorber channel layer.
@nl
P2093
P356
P1433
P1476
Photojunction field-effect tra ...... um dot absorber channel layer.
@en
P2093
André J Labelle
Brandon R Sutherland
Illan J Kramer
S Hoogland
Valerio Adinolfi
P304
P356
10.1021/NN5053537
P407
P577
2015-01-13T00:00:00Z