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High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.High-efficiency, solution-processed, multilayer phosphorescent organic light-emitting diodes with a copper thiocyanate hole-injection/hole-transport layer.Impact of oxygen plasma treatment on the device performance of zinc oxide nanoparticle-based thin-film transistors.Modulation-Doped In2 O3 /ZnO Heterojunction Transistors Processed from Solution.Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm(2) V(-1) s(-1).A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors.Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants.Morphological impact of zinc oxide layers on the device performance in thin-film transistorsCopper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cellsCopper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar CellsConjugated Polymer-Porphyrin Complexes for Organic ElectronicsHigh-Efficiency Organic Photovoltaic Cells Based on the Solution-Processable Hole Transporting Interlayer Copper Thiocyanate (CuSCN) as a Replacement for PEDOT:PSSHigh electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperaturesExploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility TransistorsTouch sensor application of spray deposited ZnO filmsAir-Stable n-channel Diketopyrrolopyrrole−Diketopyrrolopyrrole Oligomers for High Performance Ambipolar Organic TransistorsAl-Doped ZnO Transistors Processed from Solution at 120 °CMetal oxide semiconductor thin-film transistors for flexible electronics4H-1,2,6-Thiadiazin-4-one-containing small molecule donors and additive effects on their performance in solution-processed organic solar cellsExploring and controlling intrinsic defect formation in SnO2 thin filmsIndium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray PyrolysisIntegration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary invertersLow-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuitsCorrection: High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °CFully Patterned Low-Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray PyrolysisHigh-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °CSolution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion processInfluence of self-assembled monolayer dielectrics on the morphology and performance of α,ω-dihexylquaterthiophene in thin film transistorsLow-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide NanoparticlesPreparation and soft lithographic printing of nano-sized ITO-dispersions for the manufacture of electrodes for TFTsAddition of the Lewis Acid Zn(C6 F5 )2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V-1 s-1
P50
Q36142289-CE8B5334-A462-4CD5-884A-E66F27E2FC28Q41850609-18FCCEF2-01CF-40AB-8776-04E99163BD4FQ43130099-F369C6A3-D8F6-4FD9-92BE-B2C085408B1CQ50501358-CDD9079E-B497-4869-992A-ADB8D3233B21Q50958621-D4BD7C92-00A5-4E11-95A4-48520B6A506BQ50978672-75D3DB3F-A908-4DC7-888E-537114437248Q51270436-76888BE7-269F-4CF2-BBF8-D6E44D811626Q51666925-3DDC1570-F21B-4EF9-9072-CF49DEF2DD30Q51697468-8F040F8F-7CEE-4A41-A01F-7FA1269EADAFQ58559730-42313249-C6D0-4BA1-B907-00FAA104EE3AQ58819443-B7575E70-0D8B-4A2B-875D-88F64BB4768FQ60433495-C5843BF2-6DB0-42CC-8969-DE8F1ED88DE3Q60433514-2FDEAD61-CE87-4349-A5C7-E53BE97584E4Q60433519-E5C77CEF-9E81-456D-AE81-B167983178BAQ60650897-237924FA-64CA-4B43-B1ED-DFF9CFC9F3DDQ61727468-AED97272-90CC-473E-97DE-AA050EB81967Q61727469-37B7D46B-F502-4877-AF07-28D5CD2B5905Q61727470-25AD3129-1604-4B59-9834-34A5D3BCB3FEQ61727471-848B1A63-61FC-4722-A7B5-BCCB8060B878Q61727472-A027CD73-2E00-4C79-B10D-47F6D7C5A50DQ61727473-9A49A86C-733B-4D8F-A36D-0EECC05387C3Q61727474-6583C410-BA93-495C-AA10-B7D514B5379EQ61727475-2D1A6096-75EB-40DF-9043-FC8B5DDDBB0CQ61727476-882EDB6E-ED01-4C4F-A439-1C1B7FCF7EF4Q61727477-0A047FB0-61DB-43CB-B232-B43439AC5F58Q61727478-C89532DD-A5B8-4B3B-8B32-CB7E6E9804ACQ61727482-5D865130-16B4-4FA4-AC80-B43F59297D8BQ61727484-5E7873C9-13A5-47F8-8F50-BD4D4EF6102AQ61727485-EDA33A12-45FA-46A3-9A47-FB01ED0DF545Q61727486-AACE51BA-33F8-4485-9625-9A077D1802E0Q61727487-8C2704C6-BB71-4CDD-A266-D49ACF97F9C5Q61727488-839D49FD-1C09-4724-84A0-A0653F4863D1Q91915204-C4CCFC7F-EDFD-4CAF-B16F-1465CD79D4FF
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Hendrik Faber
@ast
Hendrik Faber
@en
Hendrik Faber
@es
Hendrik Faber
@nl
type
label
Hendrik Faber
@ast
Hendrik Faber
@en
Hendrik Faber
@es
Hendrik Faber
@nl
prefLabel
Hendrik Faber
@ast
Hendrik Faber
@en
Hendrik Faber
@es
Hendrik Faber
@nl
P106
P21
P31
P496
0000-0002-4918-2365