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Designing an all epitaxial 1,550 nm intra-cavity VCSEL using GaInAsN/AlGaInAs in the active region and AlGaAsSb/AlAsSb in top and bottom DBRsEffects of Reducing Active Radius on Modulation Performance and Relative Intensity Noise of a Strained In0.2Ga0.8As/GaAs 80A0QW VCSELAn Intra-cavity bottom emitting 1325 nm VCSEL using GaInAs / GaInP MQWs and AlGaInAs / InP DBRs for epitaxial fabricationPerformance optimization for terahertz quantum cascade laser at higher temperature using genetic algorithmImprovement of modulation performance and bandwidth of a 980 nm strained In0.2Ga0.8As/GaAs QW VCSEL
P50
description
onderzoeker
@nl
researcher, ORCID id # 0000-0003-0852-3247
@en
name
Saiful Islam
@ast
Saiful Islam
@en
Saiful Islam
@es
Saiful Islam
@nl
type
label
Saiful Islam
@ast
Saiful Islam
@en
Saiful Islam
@es
Saiful Islam
@nl
prefLabel
Saiful Islam
@ast
Saiful Islam
@en
Saiful Islam
@es
Saiful Islam
@nl
P106
P31
P496
0000-0003-0852-3247