about
Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics.Molecular and electronic-structure basis of the ambipolar behavior of naphthalimide-terthiophene derivatives: implementation in organic field-effect transistors.Novel heterocycle-based two-photon absorbing dyes.Novel coordinating motifs for lanthanide(III) ions based on 5-(2-pyridyl)tetrazole and 5-(2-pyridyl-1-oxide)tetrazole. Potential new contrast agents.Novel heteroaromatic-based multi-branched dyes with enhanced two-photon absorption activity.High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors.Twisted π-system chromophores for all-optical switching.n-Channel semiconductor materials design for organic complementary circuits.Sigma-pi molecular dielectric multilayers for low-voltage organic thin-film transistors.Printed diodes operating at mobile phone frequencies.Rational design of ambipolar organic semiconductors: is core planarity central to ambipolarity in thiophene-naphthalene semiconductors?Rylene and related diimides for organic electronics.Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics.Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements.Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.Intramolecular Locked Dithioalkylbithiophene-Based Semiconductors for High-Performance Organic Field-Effect Transistors.Metal oxides for optoelectronic applications.BODIPY-thiophene copolymers as p-channel semiconductors for organic thin-film transistors.Organic and Polymeric Semiconductors Enhanced by Noncovalent Conformational Locks.Structure-performance correlations in vapor phase deposited self-assembled nanodielectrics for organic field-effect transistors.Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.n-Type organic semiconductors in organic electronics.Organic n-channel field-effect transistors based on arylenediimide-thiophene derivatives.Solution-processable low-molecular weight extended arylacetylenes: versatile p-type semiconductors for field-effect transistors and bulk heterojunction solar cells.Pentacene transistors fabricated on photocurable polymer gate dielectrics: tuning surface viscoelasticity and device response.Marked alkyl- vs alkenyl-substitutent effects on squaraine dye solid-state structure, carrier mobility, and bulk-heterojunction solar cell efficiency.Phenacyl-thiophene and quinone semiconductors designed for solution processability and air-stability in high mobility n-channel field-effect transistors.Organic semiconductors: Made to order.The role of regioregularity, crystallinity, and chain orientation on electron transport in a high-mobility n-type copolymer.High performance and stable N-channel organic field-effect transistors by patterned solvent-vapor annealing.Metal chelation aptitudes of bis(o-azaheteroaryl)methanes as tuned by heterocycle charge demands.All-printed flexible organic transistors enabled by surface tension-guided blade coating.Remarkable order of a high-performance polymer.A distinctive example of the cooperative interplay of structure and environment in tuning of intramolecular charge transfer in second-order nonlinear optical chromophores.Vapor phase self-assembly of electrooptic thin films via triple hydrogen bonds.Universal quinone electrodes for long cycle life aqueous rechargeable batteries.Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors.
P50
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P50
description
researcher
@en
ricercatore
@it
wetenschapper
@nl
հետազոտող
@hy
name
Antonio Facchetti
@ast
Antonio Facchetti
@en
Antonio Facchetti
@es
Antonio Facchetti
@nl
type
label
Antonio Facchetti
@ast
Antonio Facchetti
@en
Antonio Facchetti
@es
Antonio Facchetti
@nl
prefLabel
Antonio Facchetti
@ast
Antonio Facchetti
@en
Antonio Facchetti
@es
Antonio Facchetti
@nl
P69
P214
P244
P1053
B-8034-2014
P106
P21
P213
0000 0003 7837 2368
P214
P244
n2009079807
P31
P3829
P496
0000-0002-8175-7958
P734
P735
P7859
lccn-n2009079807