Surface States and Rectification at a Metal Semi-Conductor Contact
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Photoelectric Emission and Contact Potentials of SemiconductorsSpace-Charge Effects on Electron TunnelingFormation of an electric dipole at metal-semiconductor interfacesElectrodes for Semiconductor Gas Sensors.Electrically driven cation exchange for in situ fabrication of individual nanostructuresTemplated dewetting: designing entirely self-organized platforms for photocatalysis.Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector.Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode.The pH Response and Sensing Mechanism of n-Type ZnO/Electrolyte Interfaces.Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.Mapping Energy Levels for Organic Heterojunctions.Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells.Study of Direct-Contact HfO₂/Si Interfaces.A new electrode design for ambipolar injection in organic semiconductorsDiamond as an inert substrate of graphene.Electronic and optical properties of graphene and graphitic ZnO nanocomposite structures.Experimental determination of the pressure dependence of the barrier height of metal/Schottky-barrier height and electronic structure of the Si interface with metal silicides: CoSi2, NiSi2, and YSi2.Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces.Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure.Monolayer AgBiP2Se6: an atomically thin ferroelectric semiconductor with out-plane polarization.The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors.Chemicophysical surface treatment and the experimental demonstration of Schottky-Mott rules for metal/semiconductor heterostructure interfaces.Interface Schottky barrier engineering via strain in metal-semiconductor composites.Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.13.8% Efficiency hybrid Si/organic heterojunction solar cells with MoO3 film as antireflection and inversion induced layer.Cd(II) based metal-organic framework behaving as a Schottky barrier diode.Current transport in high-barrier IrSi/Si Schottky diodes.Effects of alloy disorder on Schottky-barrier heights.The physics and chemistry of the Schottky barrier heightBarrier Height Studies on Metal‐Semiconductor SystemsFermi Level Position at Metal-Semiconductor InterfacesTheoretical study of Schottky-barrier formation at epitaxial rare-earth-metal/semiconductor interfacesVariation of the contact resistance with electric current for gold electrodes on a squaraine single crystalPolarity-dependent pinning of a surface stateRecent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature ApplicationsAb initiostudy of electron affinity variation induced by organic molecule adsorption on the silicon (001) surfaceEquivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors
P2860
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P2860
Surface States and Rectification at a Metal Semi-Conductor Contact
description
1947 nî lūn-bûn
@nan
1947 թուականի Մայիսին հրատարակուած գիտական յօդուած
@hyw
1947 թվականի մայիսին հրատարակված գիտական հոդված
@hy
1947年の論文
@ja
1947年論文
@yue
1947年論文
@zh-hant
1947年論文
@zh-hk
1947年論文
@zh-mo
1947年論文
@zh-tw
1947年论文
@wuu
name
Surface States and Rectification at a Metal Semi-Conductor Contact
@ast
Surface States and Rectification at a Metal Semi-Conductor Contact
@en
Surface States and Rectification at a Metal Semi-Conductor Contact
@en-gb
type
label
Surface States and Rectification at a Metal Semi-Conductor Contact
@ast
Surface States and Rectification at a Metal Semi-Conductor Contact
@en
Surface States and Rectification at a Metal Semi-Conductor Contact
@en-gb
prefLabel
Surface States and Rectification at a Metal Semi-Conductor Contact
@ast
Surface States and Rectification at a Metal Semi-Conductor Contact
@en
Surface States and Rectification at a Metal Semi-Conductor Contact
@en-gb
P356
P1433
P1476
Surface States and Rectification at a Metal Semi-Conductor Contact
@en
P304
P356
10.1103/PHYSREV.71.717
P407
P50
P577
1947-05-01T00:00:00Z
1947-05-15T00:00:00Z