Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si / SiO 2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
about
Electrical current through individual pairs of phosphorus donor atoms and silicon dangling bondsSpin-chemistry concepts for spintronics scientists.Electron Spin Resonance at the Level of 10^{4} Spins Using Low Impedance Superconducting Resonators.Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells.Theory of pulsed reaction yield detected magnetic resonance
P2860
Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si / SiO 2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
description
2010 nî lūn-bûn
@nan
2010 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
2010 թվականի հունվարին հրատարակված գիտական հոդված
@hy
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
name
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@ast
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@en
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@nl
type
label
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@ast
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@en
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@nl
prefLabel
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@ast
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@en
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@nl
P2093
P2860
P1476
Spin-Dependent Recombination b ...... cted Electron Double Resonance
@en
P2093
Bastian Galler
Felix Hoehne
Martin S. Brandt
P2860
P356
10.1103/PHYSREVLETT.104.046402
P407
P577
2010-01-27T00:00:00Z