Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2 Ti 0.8)O3 films.
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Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory.Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substratesLow-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr0.52Ti 0.48)O 3 Nanodot Arrays.Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.MoS2 memristor with photoresistive switching.Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states.Polarization curling and flux closures in multiferroic tunnel junctions.Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.A ferroelectric memristor.Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit.Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.Ferroelectric tunnel junctions for information storage and processing.Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier.Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers.The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence.Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.A ferroelectric memristor based on the migration of oxygen vacanciesInvestigation of multilevel data memory using filament and polarization controlCurrent and surface charge modified hysteresis loops in ferroelectric thin films
P2860
Q35102967-BA28DD41-1AFA-408A-A9D0-297DA88BA076Q35597650-87748586-7D91-40A9-B300-8CFC275AA22CQ35616669-CD5FDC5C-70B4-4EFA-B2A9-5521122CBB6AQ35925354-D5E1EE27-3A42-42DF-AF18-5CA58F649C70Q36376271-B5ED148F-6F9E-4694-8070-9034A9336E08Q36512187-388E7DE5-B430-4C83-AC93-8C261D81A7DBQ37153812-F9DF1839-DF08-4015-893A-03173AB19A62Q37321968-91A5447E-EE79-42BF-9D14-D383463F93ACQ37423788-0F332729-AB23-4420-B185-8AD93A5B5A0FQ38707842-9A5AD93F-7381-46B1-9D0B-C764E6DCB815Q39551881-56CE9F8C-26D8-4C11-8D44-838EE77E4303Q40369299-E4CB208B-5CAD-4F73-84CF-DE9A722E3530Q42227036-FB2639D8-9CE4-4255-99B5-192D6E8CECB6Q50770654-53F1584F-130A-48BC-8FC2-1AB9DD8F4A76Q50790925-6F8129B0-2B2B-40CC-8A99-5C52B02C6D9DQ51315112-8EDD3195-38CA-4E1F-A130-7018BFD5957AQ53167921-E87DF5CC-38E5-4C3C-8965-34672931B5B8Q53389799-918A0AF9-6F0C-483F-AA5C-CFC418174CBEQ53939281-BB260632-C24C-4A67-87EA-3BF4FF8D2EB1Q57518631-1B3D0F03-2308-4AC0-B0C3-DDBC9A025035Q57518634-E3E26523-D212-4459-950C-E8825372CF49Q57583063-C7A520C2-A109-418F-93B5-96E9153D8679
P2860
Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2 Ti 0.8)O3 films.
description
2011 nî lūn-bûn
@nan
2011 թուականի Յունիսին հրատարակուած գիտական յօդուած
@hyw
2011 թվականի հունիսին հրատարակված գիտական հոդված
@hy
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
name
Room-temperature ferroelectric ...... hin Pb(Zr 0.2 Ti 0.8)O3 films.
@ast
Room-temperature ferroelectric ...... hin Pb(Zr 0.2 Ti 0.8)O3 films.
@en
type
label
Room-temperature ferroelectric ...... hin Pb(Zr 0.2 Ti 0.8)O3 films.
@ast
Room-temperature ferroelectric ...... hin Pb(Zr 0.2 Ti 0.8)O3 films.
@en
prefLabel
Room-temperature ferroelectric ...... hin Pb(Zr 0.2 Ti 0.8)O3 films.
@ast
Room-temperature ferroelectric ...... hin Pb(Zr 0.2 Ti 0.8)O3 films.
@en
P2093
P356
P1433
P1476
Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2 Ti 0.8)O3 films
@en
P2093
Daniel Pantel
Dietrich Hesse
Silvana Goetze
P304
P356
10.1021/NN2018528
P407
P50
P577
2011-06-23T00:00:00Z