Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature.
about
The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering.Electron-phonon scattering effect on the lattice thermal conductivity of silicon nanostructures.Bifurcations of Coupled Electron-Phonon Modes in an Antiferromagnet Subjected to a Magnetic Field.
P2860
Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature.
description
2016 nî lūn-bûn
@nan
2016 թուականի Հոկտեմբերին հրատարակուած գիտական յօդուած
@hyw
2016 թվականի հոտեմբերին հրատարակված գիտական հոդված
@hy
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
name
Photo-excited charge carriers ...... n silicon at room temperature.
@ast
Photo-excited charge carriers ...... n silicon at room temperature.
@en
type
label
Photo-excited charge carriers ...... n silicon at room temperature.
@ast
Photo-excited charge carriers ...... n silicon at room temperature.
@en
prefLabel
Photo-excited charge carriers ...... n silicon at room temperature.
@ast
Photo-excited charge carriers ...... n silicon at room temperature.
@en
P2860
P356
P1476
Photo-excited charge carriers ...... n silicon at room temperature.
@en
P2093
A A Maznev
Keith A Nelson
P2860
P2888
P356
10.1038/NCOMMS13174
P407
P577
2016-10-12T00:00:00Z
P6179
1031976159