Improved response of ZnO films for pyroelectric devices.
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Light-induced pyroelectric effect as an effective approach for ultrafast ultraviolet nanosensingSelf-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy.Enhanced Performance of a Self-Powered Organic/Inorganic Photodetector by Pyro-Phototronic and Piezo-Phototronic Effects.Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect.
P2860
Improved response of ZnO films for pyroelectric devices.
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2012 nî lūn-bûn
@nan
2012 թուականի Դեկտեմբերին հրատարակուած գիտական յօդուած
@hyw
2012 թվականի դեկտեմբերին հրատարակված գիտական հոդված
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2012年の論文
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2012年論文
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2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
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name
Improved response of ZnO films for pyroelectric devices.
@ast
Improved response of ZnO films for pyroelectric devices.
@en
type
label
Improved response of ZnO films for pyroelectric devices.
@ast
Improved response of ZnO films for pyroelectric devices.
@en
prefLabel
Improved response of ZnO films for pyroelectric devices.
@ast
Improved response of ZnO films for pyroelectric devices.
@en
P2860
P356
P1433
P1476
Improved response of ZnO films for pyroelectric devices.
@en
P2093
Chun-Ching Hsiao
Shih-Yuan Yu
P2860
P304
17007-17022
P356
10.3390/S121217007
P407
P577
2012-12-12T00:00:00Z