Equilibrium at the edge and atomistic mechanisms of graphene growth.
about
Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging.In Situ Graphene Growth Dynamics on Polycrystalline Catalyst FoilsInsights into carbon nanotube nucleation: cap formation governed by catalyst interfacial step flowRebar graphene.Formation of graphene grain boundaries on Cu(100) surface and a route towards their elimination in chemical vapor deposition growth.Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study.Atomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towards a sharp in-plane junction.Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restorationBonding-restricted structure search for novel 2D materials with dispersed C2 dimers.Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition.Polycrystalline graphene and other two-dimensional materials.Spiers Memorial Lecture. Advances of carbon nanomaterials.Graphene single crystals: size and morphology engineering.Energetics of atomic scale structure changes in graphene.Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory.Atomistic simulation of the growth of defect-free carbon nanotubes.Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices.An atomistic mechanism study of GaN step-flow growth in vicinal m-plane orientations.The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth.What are the active carbon species during graphene chemical vapor deposition growth?Energetics and kinetics of phase transition between a 2H and a 1T MoS2 monolayer-a theoretical study.Exploring oxygen in graphene chemical vapor deposition synthesis.Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication.Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential.Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass.Direct Top-Down Fabrication of Large-Area Graphene Arrays by an In Situ Etching Method.Breaking of symmetry in graphene growth on metal substrates.Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching.Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition.In situ atomistic insight into the growth mechanisms of single layer 2D transition metal carbides.In situ edge engineering in two-dimensional transition metal dichalcogenides.Large hexagonal bi- and trilayer graphene single crystals with varied interlayer rotations
P2860
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P2860
Equilibrium at the edge and atomistic mechanisms of graphene growth.
description
2012 nî lūn-bûn
@nan
2012 թուականի Սեպտեմբերին հրատարակուած գիտական յօդուած
@hyw
2012 թվականի սեպտեմբերին հրատարակված գիտական հոդված
@hy
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
name
Equilibrium at the edge and atomistic mechanisms of graphene growth.
@ast
Equilibrium at the edge and atomistic mechanisms of graphene growth.
@en
type
label
Equilibrium at the edge and atomistic mechanisms of graphene growth.
@ast
Equilibrium at the edge and atomistic mechanisms of graphene growth.
@en
prefLabel
Equilibrium at the edge and atomistic mechanisms of graphene growth.
@ast
Equilibrium at the edge and atomistic mechanisms of graphene growth.
@en
P2860
P356
P1476
Equilibrium at the edge and atomistic mechanisms of graphene growth.
@en
P2093
Boris I Yakobson
P2860
P304
15136-15140
P356
10.1073/PNAS.1207519109
P407
P577
2012-09-04T00:00:00Z