Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
about
Phase transformations of an InSb surface induced by strong femtosecond laser pulses.Ultrafast laser-induced order-disorder transitions in semiconductors.Behavior of chi (2) during a laser-induced phase transition in GaAs.Laser-induced band-gap collapse in GaAs.Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors.
P2860
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
description
1994 nî lūn-bûn
@nan
1994 թուականի Յունիսին հրատարակուած գիտական յօդուած
@hyw
1994 թվականի հունիսին հրատարակված գիտական հոդված
@hy
1994年の論文
@ja
1994年論文
@yue
1994年論文
@zh-hant
1994年論文
@zh-hk
1994年論文
@zh-mo
1994年論文
@zh-tw
1994年论文
@wuu
name
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
@ast
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
@en
type
label
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
@ast
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
@en
prefLabel
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
@ast
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
@en
P2093
P1433
P1476
Dielectric constant of GaAs during a subpicosecond laser-induced phase transition.
@en
P2093
P304
16403-16406
P356
10.1103/PHYSREVB.49.16403
P407
P577
1994-06-01T00:00:00Z