Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
about
One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates.Graphene-based nanomaterials: biological and medical applications and toxicity.High vacuum synthesis and ambient stability of bottom-up graphene nanoribbons.A Rational Strategy for Graphene Transfer on Substrates with Rough Features.
P2860
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
description
2014 nî lūn-bûn
@nan
2014 թուականի Մայիսին հրատարակուած գիտական յօդուած
@hyw
2014 թվականի մայիսին հրատարակված գիտական հոդված
@hy
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
name
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
@ast
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
@en
type
label
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
@ast
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
@en
prefLabel
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
@ast
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
@en
P2093
P2860
P356
P1433
P1476
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering.
@en
P2093
A John Hart
Anna C Brieland-Shoultz
B Viswanath
Christophor Prohoda
Daniel Q McNerny
Davor Copic
Erik S Polsen
Fabrice R Laye
Nicholas T Dee
Vijayen S Veerasamy
P2860
P2888
P356
10.1038/SREP05049
P407
P577
2014-05-23T00:00:00Z
P5875
P6179
1047990974