Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
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Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin filmsTest-photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system.Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35-x)Se65 thin films.Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors
P2860
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
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2010 nî lūn-bûn
@nan
2010 թուականի Հոկտեմբերին հրատարակուած գիտական յօդուած
@hyw
2010 թվականի հոտեմբերին հրատարակված գիտական հոդված
@hy
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
name
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
@ast
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
@en
type
label
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
@ast
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
@en
prefLabel
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
@ast
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
@en
P2093
P356
P1433
P1476
Photo-stability of pulsed laser deposited Ge(x)As(y)Se(100-x-y) amorphous thin films.
@en
P2093
M Cathelinaud
P304
22944-22957
P356
10.1364/OE.18.022944
P407
P577
2010-10-01T00:00:00Z