Formation mechanism and optical properties of InAs quantum dots on the surface of GaAs nanowires.
about
Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band.Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals.Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.
P2860
Formation mechanism and optical properties of InAs quantum dots on the surface of GaAs nanowires.
description
2012 nî lūn-bûn
@nan
2012 թուականի Մարտին հրատարակուած գիտական յօդուած
@hyw
2012 թվականի մարտին հրատարակված գիտական հոդված
@hy
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
name
Formation mechanism and optica ...... the surface of GaAs nanowires.
@ast
Formation mechanism and optica ...... the surface of GaAs nanowires.
@en
Formation mechanism and optica ...... the surface of GaAs nanowires.
@nl
type
label
Formation mechanism and optica ...... the surface of GaAs nanowires.
@ast
Formation mechanism and optica ...... the surface of GaAs nanowires.
@en
Formation mechanism and optica ...... the surface of GaAs nanowires.
@nl
prefLabel
Formation mechanism and optica ...... the surface of GaAs nanowires.
@ast
Formation mechanism and optica ...... the surface of GaAs nanowires.
@en
Formation mechanism and optica ...... the surface of GaAs nanowires.
@nl
P2093
P356
P1433
P1476
Formation mechanism and optica ...... the surface of GaAs nanowires.
@en
P2093
Junshuai Li
Shiwei Cai
Xiaolong Lv
Xiaomin Ren
Yongqing Huang
P304
P356
10.1021/NL204204F
P407
P577
2012-03-26T00:00:00Z