about
High performance broadband photodetector using fabricated nanowires of bismuth selenide.Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3Direct TEM observations of growth mechanisms of two-dimensional MoS2 flakes.Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport.Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide SubstratesLarge area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructuresLight Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film SuperconductorEnabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layers.Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence.Ultrafast response of monolayer molybdenum disulfide photodetectorsBroadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications.Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2Photoresponsive and gas sensing field-effect transistors based on multilayer WS₂ nanoflakes.Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures.CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.Large-area synthesis of monolayer WSe₂ on a SiO₂/Si substrate and its device applications.Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors.Water-Assisted Synthesis of Molybdenum Disulfide Film with Single Organic Liquid Precursor.A two-dimensional semiconductor transistor with boosted gate control and sensing ability.Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy.High-performance few-layer Mo-doped ReSe₂ nanosheet photodetectors.Ambient effects on electrical characteristics of CVD-grown monolayer MoS2 field-effect transistors.Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode.Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applicationsLattice strain effects on the optical properties of MoS2 nanosheets.Synthesis and high sensing properties of a single Pd-doped SnO2 nanoribbon.Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes.Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy.25th anniversary article: hybrid nanostructures based on two-dimensional nanomaterials.Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating.Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer.Photodiode-like behavior and excellent photoresponse of vertical Si/monolayer MoS2 heterostructuresFew-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.Photothermoelectric and photovoltaic effects both present in MoS2.Fate and Transport of Molybdenum Disulfide Nanomaterials in Sand Columns.Light generation and harvesting in a van der Waals heterostructureUltimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfidePatterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors.Large-Area Epitaxial Monolayer MoS2.
P2860
Q27302020-0A06E52C-6467-432E-8E6E-4509EF3F2D7DQ27320951-5AAB9F7F-93A2-4060-B367-646B93C720AFQ27335390-D26141AB-5BDE-44E4-819A-49EA80A17A95Q27343035-5326FB54-AE1B-42EA-A2C0-2F4A6BF69FD6Q28821544-AF8D68A7-58C6-4C0A-81F8-CA42F6EA3CA3Q28828924-B84919A7-30DF-44D3-AA44-099D4F922E37Q30356381-A107EC96-7718-4EC9-A90E-4C9400A68FB5Q30367288-1BB3C579-934E-4E29-82D8-CE522348CEDFQ30386815-69ADEC6C-9E88-4DEA-A691-5CC6BBEC1366Q30392840-912FC2CF-9A85-4DD7-B2A0-057A84695937Q30396778-43545676-E18B-4D92-A8E6-E22611A4FCF6Q30397762-BECCB8D3-C5FB-4A31-8A9C-365D44FA3363Q30402928-41D6BB3A-8F64-441F-B071-53CD04F4F8CAQ30436855-CF82C494-EDA8-4301-9801-29D3F9784E62Q31122400-7B57BD68-ED78-4200-8B7F-6C22784D6B7AQ33462036-81053325-D7EB-4E6D-BE30-6899C6BADA2CQ33464158-37C2ACF0-C1D8-4D27-BAC7-E3645970089AQ33466482-ED81C6F4-E5E8-4734-A93A-D49194DB3534Q33694755-E14A48EE-1460-4BA5-8A4F-2E00CFD65BEAQ33708118-8B61901A-DC08-4DDC-8734-B4F4287273AEQ33780954-0F1A01E6-FC9B-41E4-9853-6ED0AEE3D4A2Q33802201-E558130D-23A5-4FCE-83BC-EF3CD0C59D7AQ33826003-B2ED458A-8C90-4242-AE62-F58CF18D862FQ33849785-FC84A5A2-C36C-4A0F-BD03-ADC742AF3E50Q33866946-6BAEA3C4-E072-4B79-B85C-1C458D1AD2B0Q33876981-1EFF770A-DECC-4E24-A88D-50B82DD13A80Q34273500-BB177A36-4D85-4FA1-B61F-2878335760EDQ34306136-00743126-9144-4AC7-AFBA-1F588423F77AQ34347442-5B6FB01C-4946-4A43-BDA4-BC7161802B6EQ34409453-F671D0DE-E362-49B2-AE8C-FAB9D2173608Q34488003-54DA957E-7C95-4168-A917-23DAD4998385Q34546092-E5018DD0-BA59-4024-99C8-C6B29E23FFC1Q34574062-2BEB83F6-CE00-4EF9-B177-CA7F65220D27Q34598272-AB078EC0-541A-4E53-9EA0-11083297921BQ34990576-87146F23-1A7B-40A5-9ECA-C16AC81ADADCQ35068402-D0F6EE35-C3F4-45A0-ADC5-15ACC0F417ECQ35112335-78ADD967-1FB0-4F71-AA21-B40A81EB25A4Q35247097-1B0E9153-BF29-4FA2-96B2-824291471860Q35543235-3A8C0DAB-D77F-42CF-8F50-ACFD79804B23Q35556575-2BEC6D28-920B-4309-A736-C2CA86BBB410
P2860
description
2013 nî lūn-bûn
@nan
2013 թուականի Յունիսին հրատարակուած գիտական յօդուած
@hyw
2013 թվականի հունիսին հրատարակված գիտական հոդված
@hy
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
name
Ultrasensitive photodetectors based on monolayer MoS2.
@ast
Ultrasensitive photodetectors based on monolayer MoS2.
@en
Ultrasensitive photodetectors based on monolayer MoS2.
@nl
type
label
Ultrasensitive photodetectors based on monolayer MoS2.
@ast
Ultrasensitive photodetectors based on monolayer MoS2.
@en
Ultrasensitive photodetectors based on monolayer MoS2.
@nl
prefLabel
Ultrasensitive photodetectors based on monolayer MoS2.
@ast
Ultrasensitive photodetectors based on monolayer MoS2.
@en
Ultrasensitive photodetectors based on monolayer MoS2.
@nl
P2093
P356
P1476
Ultrasensitive photodetectors based on monolayer MoS2.
@en
P2093
Aleksandra Radenovic
Dominik Lembke
Metin Kayci
Oriol Lopez-Sanchez
P2888
P304
P356
10.1038/NNANO.2013.100
P407
P50
P577
2013-06-09T00:00:00Z
P5875
P6179
1023181230