Bandgap engineering of strained monolayer and bilayer MoS2.
about
Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives.Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic ScalesThe Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2.Interface strain in vertically stacked two-dimensional heterostructured carbon-MoS2 nanosheets controls electrochemical reactivityLarge area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructuresAmorphous nickel-cobalt complexes hybridized with 1T-phase molybdenum disulfide via hydrazine-induced phase transformation for water splittingTransfer of monolayer TMD WS2 and Raman study of substrate effects.Chromatic Mechanical Response in 2-D Layered Transition Metal Dichalcogenide (TMDs) based Nanocomposites.Improving resolution in quantum subnanometre-gap tip-enhanced Raman nanoimagingTopological Properties of Atomic Lead Film with Honeycomb Structure.Computational Predictions for Single Chain Chalcogenide-Based One-Dimensional Materials.Lattice strain effects on the optical properties of MoS2 nanosheets.Possible electric field induced indirect to direct band gap transition in MoSe2.Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure.Continuously tunable electronic structure of transition metal dichalcogenides superlattices.Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics.Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide.Emission energy, exciton dynamics and lasing properties of buckled CdS nanoribbons.Polaritons in layered two-dimensional materials.Monolayer WS2 Nanopores for DNA Translocation with Light-Adjustable Sizes.Atomic structure and formation mechanism of sub-nanometer pores in 2D monolayer MoS2.Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin FilmMapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant EffectsModulation of electronic properties from stacking orders and spin-orbit coupling for 3R-type MoS2.Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions.Surface enhanced Raman scattering of monolayer MX2 with metallic nano particles.Influence of curvature strain and Van der Waals force on the inter-layer vibration mode of WS2 nanotubes: A confocal micro-Raman spectroscopic study.An anomalous interlayer exciton in MoS2.Black Phosphorus: Critical Review and Potential for Water Splitting Photocatalyst.Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts.Limits of Coherency and Strain Transfer in Flexible 2D van der Waals Heterostructures: Formation of Strain Solitons and Interlayer Debonding.Realizing chemical codoping in TiO2.Photocurrent generation with two-dimensional van der Waals semiconductors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Chemical Vapor Deposition of Monolayer Mo(1-x)W(x)S2 Crystals with Tunable Band Gaps.Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS2/WS2 van der Waals Heterobilayer.Electrical contacts to two-dimensional semiconductors.Strain engineering of graphene: a review.Recent progress in van der Waals heterojunctions.
P2860
Q28070228-77C6243C-355A-4C41-83BF-5597A13265BFQ28817393-78629931-E531-4E19-9DF6-F69A20F15299Q28818807-8F919FE9-F8A3-4D8B-B8FE-21F7D0F67D28Q28821877-404D72F3-2FA7-4A72-A9EE-593282A63ADCQ28828818-89728E1C-799F-4888-B8F3-D81EBE9B4F57Q28828924-7C5DF675-C3AB-4199-A944-4DB2AA5B18C2Q30252536-73B6D6B3-C713-4CDC-9894-50FBB3EF5D04Q30362742-ECF7F126-EFB6-4A36-A32B-E336392C356CQ30372194-B7AAD0DA-8523-4A96-9780-8606075A48C3Q30381921-CADDA352-7A9F-43D5-B513-B39FB27E78F2Q31049003-504361CD-CDCB-4990-B967-51D1ABB8AFB9Q33742257-44783932-D224-4F0F-BB40-50F2A96DEB74Q33876981-4A69695F-D0E0-47D1-A5C3-723DDC87A2B4Q33899269-9E3C12DD-BC26-4051-A950-21A1B78EDE32Q34241322-DA5DED51-735E-4072-8D96-0360199C3C8EQ35079919-77AF2C14-FA77-4DED-A56B-651C122AC0B3Q35816657-8A5DDD08-9A2D-4A06-AA64-80DF1F7F47ECQ36018802-03991C1B-B706-4311-8BBE-43A78B388DAEQ36025676-D0F71E87-B27A-41D7-8F51-FF0BEDB3DE90Q36205366-1F0C20FF-D900-41C4-B887-4C461348536CQ36261595-6140D72E-FBAC-47F4-A7F2-11DB5EBD9B68Q36360535-2472AE37-253E-465A-8AFD-25D3566789B6Q36388866-F1B0E4F7-27C3-44CB-9E11-619497DB5349Q36499393-8A0039FB-E205-41F6-90E8-93B2F806850CQ36774436-10F3206B-098D-49B0-A743-1EBD31DF0BADQ36928517-19EEA01B-1C8F-4D9D-99FD-406F3E5CCE79Q37125241-F9D23F78-109E-4431-BCAB-69776DDCDC06Q37251557-2A0B0867-DEB7-464A-8C5A-5321FB61F147Q37411872-AFD7FCCF-B71E-4236-9106-C47BAC72B88DQ37594433-C6C71D9F-3BFC-4F74-86E0-7EA9461AAB20Q37635093-A72F87C1-61FA-4C98-8BF1-85EF21676293Q38379609-0E65F930-3841-4202-9787-1CA90A7D3CE2Q38413255-138D5C78-418F-4C93-93FB-CE83A44515E2Q38440569-C77875BC-E535-4139-B633-0E86D5DE5809Q38531628-1F4E7A99-15CE-46F5-BF37-434FA715FD47Q38582278-111A2759-FDE1-4115-8FC3-158A91E43F5BQ38638390-75411B64-9138-4EAC-AAC2-273DF1CB3ADEQ38638927-80D66091-E556-46A7-914F-B75D8431F361Q38706794-6B7ACAB9-307B-4DF1-BB13-2528228D200EQ38743041-132D8E7A-C641-447D-9E3F-9E87A5F1618F
P2860
Bandgap engineering of strained monolayer and bilayer MoS2.
description
2013 nî lūn-bûn
@nan
2013 թուականի Յուլիսին հրատարակուած գիտական յօդուած
@hyw
2013 թվականի հուլիսին հրատարակված գիտական հոդված
@hy
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
name
Bandgap engineering of strained monolayer and bilayer MoS2.
@ast
Bandgap engineering of strained monolayer and bilayer MoS2.
@en
Bandgap engineering of strained monolayer and bilayer MoS2.
@nl
type
label
Bandgap engineering of strained monolayer and bilayer MoS2.
@ast
Bandgap engineering of strained monolayer and bilayer MoS2.
@en
Bandgap engineering of strained monolayer and bilayer MoS2.
@nl
prefLabel
Bandgap engineering of strained monolayer and bilayer MoS2.
@ast
Bandgap engineering of strained monolayer and bilayer MoS2.
@en
Bandgap engineering of strained monolayer and bilayer MoS2.
@nl
P2093
P356
P1433
P1476
Bandgap engineering of strained monolayer and bilayer MoS2.
@en
P2093
Hiram J Conley
Jed I Ziegler
Kirill I Bolotin
Richard F Haglund
Sokrates T Pantelides
P304
P356
10.1021/NL4014748
P407
P577
2013-07-09T00:00:00Z