about
Flexible Superhydrophobic and Superoleophilic MoS2 Sponge for Highly Efficient Oil-Water Separation.Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives.Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence.CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction.Charge-transfer-based gas sensing using atomic-layer MoS2.Well-constructed single-layer molybdenum disulfide nanorose cross-linked by three dimensional-reduced graphene oxide network for superior water splitting and lithium storage property.Direction-controlled chemical doping for reversible G-phonon mixing in ABC trilayer graphene.A Kinetic Model for Exfoliation Kinetics of Layered Materials.Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.Anisotropic bias dependent transport property of defective phosphorene layer.A strain or electric field induced direct bandgap in ultrathin silicon film and its application in photovoltaics or photocatalysis.Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin FilmRemarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitalsMagnetic MoS2 pizzas and sandwiches with Mnn (n = 1-4) cluster toppings and fillings: A first-principles investigationElectronic and magnetic properties of Co doped MoS2 monolayer.Magnetic coherent tunnel junctions with periodic grating barrierThickness Considerations of Two-Dimensional Layered Semiconductors for Transistor ApplicationsEnvironmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors.Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor.Determination of the band parameters of bulk 2H-MX2 (M = Mo, W; X = S, Se) by angle-resolved photoemission spectroscopy.Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations.Direct and Scalable Deposition of Atomically Thin Low-Noise MoS2 Membranes on Apertures.Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Recent progress in van der Waals heterojunctions.Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials.Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects.Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene.Solution-Processed Two-Dimensional MoS2 Nanosheets: Preparation, Hybridization, and Applications.Electromechanical coupling and design considerations in single-layer MoS2 suspended-channel transistors and resonators.A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2.Photoluminescence of monolayer MoS2 on LaAlO3 and SrTiO3 substrates.Flexible Device Applications of 2D Semiconductors.Enhanced second harmonic generation of MoS2 layers on a thin gold film.Synthesis of Au NP@MoS₂ Quantum Dots Core@Shell Nanocomposites for SERS Bio-Analysis and Label-Free Bio-Imaging.Prediction of entropy stabilized incommensurate phases in the system MoS2 -MoTe2.
P2860
Q27347191-CD1FE8F7-F73F-4E70-8C40-57F38A98AC88Q28070228-8509C2A5-7032-4F81-BD6A-124A5C05DB9AQ30392840-3080A1B5-00A5-4BCC-B1E1-C357FEAF8770Q33462036-00543551-6544-4C3A-AF7F-6093680E3595Q34169513-169DD0EC-44D6-460F-8D02-F2CA8161F24BQ35015573-59BA9D08-1D97-46BC-BB2C-80BDCF9C8E1BQ35144315-F415AD2A-8DB2-4B7F-843D-BA961CBD81F9Q35157200-40DFF489-5F45-49FD-B2CB-30DA2798AE0EQ35691279-F20F1804-34BE-4BCF-81CE-DF6CE1AB69AAQ35841317-2309F6F1-F305-4012-9A53-D972FC841156Q35877238-29DAD101-8B9D-4AEA-AF70-A74B121B2C0BQ35926868-0932D6AA-BDE1-4F08-AC66-04A82FA55019Q36022834-BE828088-64AB-4D27-844F-988BF06911C4Q36388866-1D2C961E-834F-40C6-B9FF-55F9D7EB5E29Q36443210-778E007E-FEAE-4C49-BC2E-968C31431C89Q36499771-C2CBC6BB-08D5-4B16-B52C-F5135E2BE4FDQ36774220-4F9FFC35-3D40-4B60-A9A6-3E4E1FF976EBQ36785087-F72BF8C1-AB72-433F-8C6B-43413FF00E99Q37084740-CA8EC70C-7341-484F-9097-97B7083395B8Q37111203-6FE1F53B-2DF7-4B61-BF2C-D5BF45B5B2A2Q37345677-2078F161-1539-4E79-BE41-1EB3493D5A5BQ37387447-DB6F4D4D-9C74-4E3A-8C18-2152713109CFQ37405566-2E266C37-35F9-43D5-A7D1-4B300E0FFFD5Q37464447-25CBC063-94BC-42E1-B5C1-1532817702DFQ37481795-31484495-C0A0-47FD-B569-45D8FD642075Q37594421-859F8E8E-42D6-45F5-9BD0-C0DD2E4B8C96Q38566615-89E7B4CA-A480-49F3-8428-3D2B690B1832Q38643122-A3C2ED8E-195A-4D3E-8699-B74E2A67F020Q38743041-57EFC2EE-D4F1-4F12-87DA-F2040D68E075Q38758351-DC7DB9A2-1E2E-4DDD-9435-8BB77B5FE066Q38800133-BEC7B18D-1EEF-4A4C-B797-580056BB4F4FQ38840259-9D3894D2-6459-40D1-BFB3-FCB550CD1248Q38872630-3B604F4C-9513-4BDC-BE55-FD257506C691Q38941575-293B531A-E1D2-4503-96BB-601469914C44Q38959496-A9A28ED0-B20D-4877-9AC6-85A2781CA541Q39100776-3903F5D5-A0AF-44A1-8066-7A789C49C3C0Q39278732-BD6471F8-BB03-465B-8AB8-2AA66CC641ECQ40703899-7A961418-679A-41DF-B6E4-DA4715E93743Q41365686-52736140-CF26-4782-AA68-1172366EFDA6Q41645757-85C07ACC-14BE-4B23-953E-428E9DFF7DB5
P2860
description
2014 nî lūn-bûn
@nan
2014 թուականի Ապրիլին հրատարակուած գիտական յօդուած
@hyw
2014 թվականի ապրիլին հրատարակված գիտական հոդված
@hy
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
name
Few-layer MoS2: a promising layered semiconductor.
@ast
Few-layer MoS2: a promising layered semiconductor.
@en
Few-layer MoS2: a promising layered semiconductor.
@nl
type
label
Few-layer MoS2: a promising layered semiconductor.
@ast
Few-layer MoS2: a promising layered semiconductor.
@en
Few-layer MoS2: a promising layered semiconductor.
@nl
prefLabel
Few-layer MoS2: a promising layered semiconductor.
@ast
Few-layer MoS2: a promising layered semiconductor.
@en
Few-layer MoS2: a promising layered semiconductor.
@nl
P356
P1433
P1476
Few-layer MoS2: a promising layered semiconductor.
@en
P2093
Qing Zhang
Rudren Ganatra
P304
P356
10.1021/NN405938Z
P407
P577
2014-04-14T00:00:00Z