Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures.
about
In-plane topological p-n junction in the three-dimensional topological insulator Bi2-xSbxTe3-ySeyRobustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystal.Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.The Property, Preparation and Application of Topological Insulators: A Review.Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
P2860
Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures.
description
2015 nî lūn-bûn
@nan
2015 թուականի Նոյեմբերին հրատարակուած գիտական յօդուած
@hyw
2015 թվականի նոյեմբերին հրատարակված գիտական հոդված
@hy
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
name
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@ast
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@en
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@nl
type
label
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@ast
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@en
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@nl
prefLabel
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@ast
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@en
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@nl
P2093
P2860
P50
P356
P1476
Realization of a vertical topo ...... b2Te3/Bi2Te3 heterostructures.
@en
P2093
Christian Weyrich
Claus M Schneider
Detlev Grützmacher
Elmar Neumann
Gregor Mussler
Jens Kellner
Jörn Kampmeier
Markus Eschbach
Martin Lanius
Mathias Gehlmann
P2860
P2888
P356
10.1038/NCOMMS9816
P50
P577
2015-11-17T00:00:00Z
P5875
P6179
1004609676
P698
P818
1510.02713