Magnetization due to localized states on graphene grain boundary
about
Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene.Impact of Mismatch Angle on Electronic Transport Across Grain Boundaries and Interfaces in 2D Materials.Existence of multi-radical and closed-shell semiconducting states in post-graphene organic Dirac materials.Transport properties through graphene grain boundaries: strain effects versus lattice symmetry.
P2860
Magnetization due to localized states on graphene grain boundary
description
2015 nî lūn-bûn
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2015年の論文
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2015年学术文章
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2015年学术文章
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2015年学术文章
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2015年学术文章
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2015年学术文章
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2015年學術文章
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2015年學術文章
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2015年學術文章
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name
Magnetization due to localized states on graphene grain boundary
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Magnetization due to localized states on graphene grain boundary
@en
type
label
Magnetization due to localized states on graphene grain boundary
@ast
Magnetization due to localized states on graphene grain boundary
@en
prefLabel
Magnetization due to localized states on graphene grain boundary
@ast
Magnetization due to localized states on graphene grain boundary
@en
P2860
P356
P1433
P1476
Magnetization due to localized states on graphene grain boundary
@en
P2093
Sudipta Dutta
P2860
P2888
P356
10.1038/SREP11744
P407
P577
2015-07-06T00:00:00Z
P5875
P6179
1037235063