Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.
about
The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE.Atomic layer deposition for nanomaterial synthesis and functionalization in energy technology
P2860
Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Ultralow threading dislocation ...... ions in hetero-epitaxial LEDs.
@ast
Ultralow threading dislocation ...... ions in hetero-epitaxial LEDs.
@en
type
label
Ultralow threading dislocation ...... ions in hetero-epitaxial LEDs.
@ast
Ultralow threading dislocation ...... ions in hetero-epitaxial LEDs.
@en
prefLabel
Ultralow threading dislocation ...... ions in hetero-epitaxial LEDs.
@ast
Ultralow threading dislocation ...... ions in hetero-epitaxial LEDs.
@en
P2093
P2860
P356
P1433
P1476
Ultralow threading dislocation ...... ions in hetero-epitaxial LEDs.
@en
P2093
Ching-Hsiang Chen
Chung-Ting Ko
Huan-Yu Shih
Makoto Shiojiri
Miin-Jang Chen
Sheng-Fu Yu
P2860
P2888
P356
10.1038/SREP13671
P407
P577
2015-09-02T00:00:00Z