A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
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Effect of crystal plane orientation on tribochemical removal of monocrystalline siliconCarbon elimination from silicon kerf: Thermogravimetric analysis and mechanistic considerations.Enhanced Thermal Conductivity of Polyimide Composites with Boron Nitride Nanosheets.Friction Regimes of Water-Lubricated Diamond (111): Role of Interfacial Ether Groups and Tribo-Induced Aromatic Surface Reconstructions.
P2860
A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
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2015 nî lūn-bûn
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2015年の論文
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2015年学术文章
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2015年学术文章
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2015年学术文章
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A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
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A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
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A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
@ast
A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
@en
prefLabel
A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
@ast
A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
@en
P2093
P2860
P356
P1433
P1476
A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
@en
P2093
Dongming Guo
Renke Kang
Zhenyu Zhang
P2860
P2888
P356
10.1038/SREP16395
P407
P577
2015-11-09T00:00:00Z