Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
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Physical and chemical mechanisms in oxide-based resistance random access memory.Conductance Quantization in Resistive Random Access Memory.Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment.Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
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article científic
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article scientifique
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artigo científico
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bilimsel makale
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scientific article published on 29 January 2014
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
@en
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
@nl
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
@en
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
@nl
P2093
P2860
P356
P1476
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
@en
P2093
Ding-Hua Bao
Hsin-Lu Chen
Jen-Chung Lou
Jung-Hui Chen
Kai-Huang Chen
Kuan-Chang Chang
Simon M Sze
Tai-Fa Young
Tian-Jian Chu
P2860
P2888
P356
10.1186/1556-276X-9-52
P577
2014-01-29T00:00:00Z
P6179
1038215296