Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method
about
Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device applicationFour-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device.Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
P2860
Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method
description
article científic
@ca
article scientifique
@fr
articolo scientifico
@it
artigo científico
@pt
bilimsel makale
@tr
scientific article published on 09 April 2014
@en
vedecký článok
@sk
vetenskaplig artikel
@sv
videnskabelig artikel
@da
vědecký článek
@cs
name
Transparent multi-level resist ...... the sol-gel dip-coating method
@en
Transparent multi-level resist ...... he sol-gel dip-coating method.
@nl
type
label
Transparent multi-level resist ...... the sol-gel dip-coating method
@en
Transparent multi-level resist ...... he sol-gel dip-coating method.
@nl
prefLabel
Transparent multi-level resist ...... the sol-gel dip-coating method
@en
Transparent multi-level resist ...... he sol-gel dip-coating method.
@nl
P2093
P2860
P356
P1433
P1476
Transparent multi-level resist ...... the sol-gel dip-coating method
@en
P2093
Hee-Dong Kim
Jae Hoon Lee
Kyoeng Heon Kim
Min Ju Yun
Tae Geun Kim
P2860
P2888
P356
10.1038/SREP04614
P407
P577
2014-04-09T00:00:00Z