Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides.
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Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide.Nonlinear photoluminescence in monolayer WS2: parabolic emission and excitation fluence-dependent recombination dynamics.Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunctionBooming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.Electrically tunable organic-inorganic hybrid polaritons with monolayer WS2.Direct observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe2 film.Chiral topological excitons in the monolayer transition metal dichalcogenides.Hybrid nanostructures of metal/two-dimensional nanomaterials for plasmon-enhanced applications.Novel silicon compatible p-WS2 2D/3D heterojunction devices exhibiting broadband photoresponse and superior detectivity.Two-Dimensional Nanomaterials for Biomedical Applications: Emerging Trends and Future Prospects.Theory of 2D crystals: graphene and beyond.Characterization of Thin Film Materials using SCAN meta-GGA, an Accurate Nonempirical Density Functional.Dark trions and biexcitons in WS2 and WSe2 made bright by e-e scattering.Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures.Moiré excitons: From programmable quantum emitter arrays to spin-orbit-coupled artificial lattices.Femtosecond to picosecond transient effects in WSe 2 observed by pump-probe angle-resolved photoemission spectroscopy.Plasmon-Exciton Coupling Interaction for Surface Catalytic Reactions.Stacking change in MoS2 bilayers induced by interstitial Mo impurities.Ultrafast quantum beats of anisotropic excitons in atomically thin ReS2.Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions.Inducing and Manipulating Heteroelectronic States in a Single MoS_{2} Thin Flake.Strain enhancement of acoustic phonon limited mobility in monolayer TiS3.Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility.Controlling phase transition for single-layer MTe2 (M = Mo and W): modulation of the potential barrier under strain.Anomalous Light Cones and Valley Optical Selection Rules of Interlayer Excitons in Twisted Heterobilayers.Full superconducting dome of strong Ising protection in gated monolayer WS2.Tuning electronic properties of transition-metal dichalcogenides via defect charge
P2860
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P2860
Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh
2014年學術文章
@zh-hant
name
Electronic structures and theo ...... nsition metal dichalcogenides.
@en
type
label
Electronic structures and theo ...... nsition metal dichalcogenides.
@en
prefLabel
Electronic structures and theo ...... nsition metal dichalcogenides.
@en
P2093
P356
P1476
Electronic structures and theo ...... nsition metal dichalcogenides.
@en
P2093
P304
P356
10.1039/C4CS00301B
P577
2014-12-04T00:00:00Z
P698
P818
1512.01627