White light emission from heterojunction diodes based on surface-oxidized porous Si nanowire arrays and amorphous In-Ga-Zn-O capping.
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White light emission from heterojunction diodes based on surface-oxidized porous Si nanowire arrays and amorphous In-Ga-Zn-O capping.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
White light emission from hete ...... amorphous In-Ga-Zn-O capping.
@en
type
label
White light emission from hete ...... amorphous In-Ga-Zn-O capping.
@en
prefLabel
White light emission from hete ...... amorphous In-Ga-Zn-O capping.
@en
P2093
P2860
P356
P1433
P1476
White light emission from hete ...... amorphous In-Ga-Zn-O capping.
@en
P2093
Jae-Min Myoung
Kyeong-Ju Moon
Tae Il Lee
P2860
P304
P356
10.1039/C3NR05328H
P407
P577
2014-04-01T00:00:00Z