Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach.
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Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics.Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface.Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes.
P2860
Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach.
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2013 nî lūn-bûn
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2013年の論文
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2013年学术文章
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2013年学术文章
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2013年学术文章
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name
Surface Stability and Growth K ...... : An Ab Initio-Based Approach.
@en
type
label
Surface Stability and Growth K ...... : An Ab Initio-Based Approach.
@en
prefLabel
Surface Stability and Growth K ...... : An Ab Initio-Based Approach.
@en
P2093
P2860
P356
P1433
P1476
Surface Stability and Growth K ...... s: An Ab Initio-Based Approach
@en
P2093
Kenji Shiraishi
Takashi Nakayama
Tomonori Ito
Toru Akiyama
P2860
P304
P356
10.3390/MA6083309
P577
2013-08-06T00:00:00Z