GaN-based light-emitting diodes on various substrates: a critical review.
about
Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers.Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration.High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN.Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation.Latent Order in High-Angle Grain Boundary of GaN.Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopyFull-duplex light communication with a monolithic multicomponent system
P2860
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P2860
GaN-based light-emitting diodes on various substrates: a critical review.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
GaN-based light-emitting diodes on various substrates: a critical review.
@en
type
label
GaN-based light-emitting diodes on various substrates: a critical review.
@en
prefLabel
GaN-based light-emitting diodes on various substrates: a critical review.
@en
P2093
P356
P1476
GaN-based light-emitting diodes on various substrates: a critical review.
@en
P2093
Guoqiang Li
Haiyan Wang
Shizhong Zhou
Weijia Yang
Wenliang Wang
Yunhao Lin
Zhiting Lin
P304
P356
10.1088/0034-4885/79/5/056501
P407
P577
2016-04-08T00:00:00Z