Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.
about
A two-dimensional semiconductor transistor with boosted gate control and sensing ability.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Atomic Layer Deposition of Rhenium Disulfide.Highly Efficient, Green, and Scalable β-Cyclodextrin-Assisted Aqueous Exfoliation of Transition-Metal Dichalcogenides: MoS2 and ReS2 Nanoflakes.Application of chemical vapor–deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction
P2860
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.
@en
type
label
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.
@en
prefLabel
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.
@en
P2093
P2860
P356
P1433
P1476
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.
@en
P2093
Hui-Xiong Deng
Jun-Wei Luo
Shu-Shen Li
Zhenxing Wang
P2860
P304
15757-15762
P356
10.1039/C5NR04625D
P407
P577
2015-09-09T00:00:00Z