Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.
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Structural and optical characterization of pure Si-rich nitride thin films.Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiNx films as emittersA junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires.The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.
P2860
Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
@zh
2011年學術文章
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name
Effect of annealing treatments ...... in silicon-rich SiNx:H films.
@en
type
label
Effect of annealing treatments ...... in silicon-rich SiNx:H films.
@en
prefLabel
Effect of annealing treatments ...... in silicon-rich SiNx:H films.
@en
P2093
P2860
P356
P1476
Effect of annealing treatments ...... in silicon-rich SiNx:H films.
@en
P2093
Abdelilah Slaoui
Bhabani Shankar Sahu
Dominique Muller
Florian Delachat
Gerald Ferblantier
Marzia Carrada
P2860
P2888
P356
10.1186/1556-276X-6-178
P577
2011-02-28T00:00:00Z
P5875
P6179
1052921472