High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.
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Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Superlattices.Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules.Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k DielectricsColloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal.Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect TransistorsTunable doping in PbS nanocrystal field-effect transistors using surface molecular dipolesDouble Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical CharacteristicsFeInS Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors
P2860
Q36401705-E9C119D6-15CF-402E-A00C-05912D4B7DFFQ37405566-2C21D69A-CB7C-4102-A39B-CF87CDEA980AQ40950405-A013E23D-0789-42DD-940A-6B009F14F02FQ41835565-36C02100-D6F2-492C-8A8B-AAEE9291E94FQ48169162-0418326B-D426-477C-AD56-185E157E85F1Q57730161-68403F5B-75DD-477F-8F5F-5E8572C33460Q57730163-C5B83A7E-9349-4BEE-9800-89463E15EFCCQ57730168-FE916586-FC8B-4B60-8FFE-E98A1A3717B9Q57922739-3B9C986A-9C60-43AB-8771-3CA4F67E8F59
P2860
High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
High mobility and low density ...... stal field-effect transistors.
@en
High mobility and low density ...... stal field-effect transistors.
@nl
type
label
High mobility and low density ...... stal field-effect transistors.
@en
High mobility and low density ...... stal field-effect transistors.
@nl
prefLabel
High mobility and low density ...... stal field-effect transistors.
@en
High mobility and low density ...... stal field-effect transistors.
@nl
P2093
P2860
P50
P356
P1433
P1476
High mobility and low density ...... stal field-effect transistors.
@en
P2093
Hiroyuki Matsui
Jun Takeya
Mohamad Insan Nugraha
Mykhailo Sytnyk
Roger Häusermann
P2860
P304
P356
10.1002/ADMA.201404495
P407
P577
2015-02-17T00:00:00Z